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Provisional Data Sheet No. PD-9.1614
IRLF230 HEXFET TRANSISTOR
N-CHANNEL 200Volt, 0.40 , HEXFET
The Logic Level `L' series of power MOSFETs are designed to be operated with level logic gate-tosource voltage of 5V. In addition to the well established characteristics of HEXFETs, they have the added advantage of providing low drive requirements to interface power loads to logic level IC's and microprocessors. Fields of application include: high speed power applications such as switching regulators, switching converters, motor drivers, solenoid and relay drivers. The HEXFET technology is the key to International Rectifier 's advance line of logic level power MOSFET transistors. The efficient geometry and unique processing of the HEXFET achieve very low on-state resistance combine with high transconductance.
(R)
Product Summary
Part Number IRLF230 BVDSS 200V RDS(on) 0.40 ID 5.2A
Features:
n n n n n n
Dynamic dv/dt Rating Logic Level Gate Drive RDS(on) Specific at VGS = 4V & 5V 150C Operating Temperature Fast Switching Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 5.0V, TC = 25C ID @ VGS = 5.0V, TC = 100C I DM PD @ TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 300(0.063 in.(1.6mm) from case for 10s) 0.98 (typical) g 4/7/97
IRLF230
5.2 3.3 20 25 0.20 10 4.2 -55 to 150
Units A
W W/K V V/ns
o
C
IRLF230
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
200 -- -- -- 1.0 4.5 -- -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.28 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 5.0 15 -- -- 0.40 0.50 2.0 -- 25 250 100 -100 41 4.9 21 9.4 34 43 26 -- -- V V/C V S( ) A
Test Conditions
VGS =0 V, ID = 250A Reference to 25C, ID = 250A VGS = 5.0V, ID = 3.1A VGS = 4.0V, ID = 2.6A VDS = VGS, ID = 250A VDS > 15V, IDS = 3.1A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 10 V VGS = -10V VGS = 5.0V, ID = 5.2A VDS = Max Rating x 0.5 VDD = 100V, ID = 5.2A, RG = 6.0
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance
nA nC
ns
nH
Measured from dr ain lead, 6mm (0.25 in) from package to center of die. Measured from source lead, 6mm (0.25 in) from package to source bonding pad.
Modified MOSFET symbol showing the internal inductances.
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
1100 230 61
-- -- --
pF
VGS = 0V, VDS = 25 V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 5.2 20 2.0 250 1.7
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier. Tj = 25C, IS = 5.2A, VGS = 0V Tj = 25C, I F = 5.2A, di/dt 100A/s VDD 50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min. Typ. Max. Units
-- -- -- -- 5.0 175 K/W
Test Conditions
Typical socket mount
IRLF230
100
TOP
I D , Drain-to-Source Current (A)
BOTTOM
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 2.5V
100
TOP
BOTTOM
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V 2.5V
10
10
2.5V 20s PULSE WIDTH TJ = 150 C
1 10 100
2.5V 20s PULSE WIDTH TJ = 25 C
1 10 100
1
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
I D = 5.2A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 C
10
TJ = 150 C
2.0
1.5
1
1.0
0.5
0.1 2.0
V DS = 50V 20s PULSE WIDTH 3.0 4.0 5.0 6.0
0.0 -60 -40 -20
VGS = 5.0V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J, Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLF230
2000
1600
V GS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss
15
ID = 5.2A VDS = 160V VDS = 100V VDS = 40V
12
C, Capacitance (pF)
1200
9
800
6
Coss
400
3
Crss
0 1 10 100
0 0 10 20
FOR TEST CIRCUIT 12 SEE FIGURE 13
30 40 50
V DS, Drain-to-Source Voltage (V)
Q G, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A)
10us 10
I D , Drain Current (A)
10 100us
TJ = 150 C
TJ = 25 C
1
1ms 1 10ms
0.1 0.2
V GS = 0 V
0.8 1.4 2.0 2.6
0.1 1
TC = 25 C TJ = 150 C Single Pulse
10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLF230
6.0
VDS
5.0
RD
VGS RG
D.U.T.
+
ID , Drain Current (A)
4.0
-VDD
5.0V
3.0
Pulse Width 1 s Duty Factor 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
VDS 90%
1.0
0.0 25 50 75 100 125 150
TC , Case Temperature
( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
(Z thJC )
0.50 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + T C
1
Thermal Response
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLF230
Current Regulator Same Type as D.U.T.
50K
5.0V 12V
.2F .3F
QG
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
IRLF230
Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. Refer to current HEXFET reliability report. K/W = C/W
ISD 5.2A, di/dt 270 A/s,
VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2%
Case Outline and Dimensions -- TO-205AF (Modified TO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 4/97

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